欢迎参加6月28日先进功率半导体Ⅱ研讨会

Chairperson

Gourab Majumdar

Gourab Majumdar

Mitsubishi Electric Corporation, Japan

Jun Li

Fuji Electric (China) Co., Ltd. China

Recently the main requirements in the market are further downsizing and higher efficiency of power conversion systems. For this reason, enhanced power density of the power modules will be the key to succeed. In this paper, electrical characteristics for all SiC modules with the 1st generation trench gate SiC MOSFETs and new concept package were presented. In addition, it was demonstrated that 1 rank extension for inverter capacity could be accomplished by applying all SiC modules against conventional Si modules.

Omar Harmon

Infineon Technologies AG, Austria

In this paper, we present a novel plug & play fully insulated TO247 with a Dual Die Pad configuration. This fully insulated device enables highest power density by reliable thermal path from chip to system heatsink. This brings power integration to the next level and fills the gap between single switch devices and power module solutions. We demonstrate in this paper PFC efficiency and device thermal measurements using a fully insulated IGBT and diode in dual die pad configuration comparing to a standard two discrete solution. In the final paper, we will also discuss possible topologies and applications that will address and benefit by this new package.

Xiankui Ma

Mitsubishi Electric & Electronics (Shanghai) Co., Ltd.  , China

Comparing to Si devices, SiC devices has better performance on both conduction power loss and switching power losses. There are many types of SiC power devices, including discrete MOSFET, SiC MOSFET module and SiC IPMs. It will be helpful to select a proper power module for our application if we could have a good understanding on all these kinds of SiC modules. This paper will introduce these SiC modules and explain how to realize a better system design by applying using the better performance of SiC modules.

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